TF447 datasheet(3/13 Pages) DYNEX

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TF447..A

3/13

DYNAMIC CHARACTERISTICS

Parameter

Symbol

Conditions

Maximum on-state voltage

At 600A peak, T

case = 25

RRM/IDRM

Peak reverse and off-state current

At V

RRM/VDRM, Tcase = 125

Gate source 20V, 20

Ω

r ≤ 0.5µs, Tj = 125˚C

dV/dt

Maximum linear rate of rise of off-state voltage

Linear to 60% V

DRM Tj = 125

oC, Gate open circuit

Min.

Max.

Units

1.85

-25

200

µs

Repetitive 50Hz

500

µs

Non-repetitive

800

µs

Rate of rise of on-state current

dI/dt

T(TO)

Threshold voltage

At T

vj = 125

On-state slope resistance

At T

vj = 125

1.2

-V

1.0

Ω

Delay time

1.5

µs

Total turn-on time

(ON)TOT

-3

µs

j = 25˚C, IT = 100A,

D = 50V, IG = 1A,

dI/dt = 50A/

µs, dI

G/dt = 1A/µs

*Typical value.

Holding current

j = 25

oC, I

TM = 1A, VD = 12V

70*

j = 125˚C, IT = 200A, VR = 50V,

dV/dt = 200V/

µs (Linear to 60% V

DRM),

R/dt = 30A/µs, Gate open circuit

Turn-off time

µs

code: A

GATE TRIGGER CHARACTERISTICS AND RATINGS

DRM = 12V,

case = 25

oC, R

L = 6Ω

Conditions

Parameter

Symbol

Gate trigger voltage

DRM = 12V, Tcase = 25

oC, R

L = 6Ω

Gate trigger current

Gate non-trigger voltage

At V

DRM Tcase = 125

oC, R

L = 1kΩ

3.0

200

0.2

Typ.

Max.

Units

RGM

Peak reverse gate voltage

FGM

Peak forward gate current

Anode positive with respect to cathode

Peak gate power

G(AV)

Mean gate power

5.0

-4

-16

-3

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