Elektronische Bauelemente

SMS6001

N-Ch Enhancement Mode Power MOSFET

27-Jan-2014 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

60

-

-

V

Zero Gate Voltage Drain Current

-

-

1

µA

Gate-Source Leakage

-

-

±5

µA

Gate-Threshold Voltage

0.8

1.3

2

V

-

1.4

2

Drain-Source On Resistance

2.3

-

1.7

2.6

Forward Transconductance

-

0.42

-

S

Body-Drain Diode Ratings

Diode Forward On–Voltage

-

0.9

1.5

V

Dynamic Characteristics

Input Capacitance

-

23.37

-

Output Capacitance

-

7.33

-

Reverse Transfer Capacitance

-

5.2

-

pF

f=1MHz

Total Gate Charge

-

1.2

-

Threshold Gate Charge

-

0.15

-

Gate-to-Source Charge

-

0.21

-

Gate-to-Drain Charge

-

0.12

-

nC

Turn-on Delay Time

-

7.6

-

Rise Time

-

5.1

-

Turn-off Delay Time

-

24.6

-

Fall Time

-

10

-

nS

Note:

1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.

2. Surface mounted on FR4 board using minimum pad size, 1oz copper

3. Pulse width<380µs

4. Repetitive rating, pulse width limited by junction temperature TJ=150°C.

Rating

Parameter

Symbol

Typ.

Max.

Unit

T≦10S

140

180

Junction-to-Ambient Thermal Resistance

1

Steady State

176

232

T≦10S

165

205

Junction-to-Ambient Thermal Resistance

2

Steady State

198

261

Junction-to-Case Thermal Resistance

Steady State

100

120

°C / W