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SSM01N60SL Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSM01N60SL Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 5 page  Elektronische Bauelemente SSM01N60SL 1A , 600V , RDS(ON) 8.1 N-Ch Enhancement Mode Power MOSFET 01-Apr-2014 Rev. A Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOT-223 RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSM01N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V TC=25°C 1 A Continuous Drain Current TC=100°C ID 0.6 A Pulsed Drain Current IDM 4 A TC=25°C 22 W Total Power Dissipation Derate above 25°C PD 0.18 W/°C Single Pulse Avalanche Energy 1 EAS 52 mJ Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient RθJA 60 °C / W Maximum Thermal Resistance Junction-Case RθJC 5.68 °C / W Notes: 1. L=30mH,IAS=1.74A, VDD=110V, RG=25 , Starting TJ =25°C 1 Gate 3 Source 2 Drain Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.90 6.70 G - 0.18 B 6.70 7.30 H 2.00 REF. C 3.30 3.80 J 0.20 0.40 D 1.42 1.90 K 1.10 REF. E 4.45 4.75 L 2.30 REF. F 0.60 0.85 M 2.80 3.20 Top View 1 2 3 4 A M B D L K F G H J E C |
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