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APT44H60J Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APT44H60J
Description  N-Channel Ultrafast Recovery FREDFET
PDF  4 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT44H60J Datasheet(HTML) 1 Page - Microsemi Corporation

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background image
SO
T-2
27
ISOTOP®
file # E145592
"UL Recognized"
G
S
S
D
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die MOSFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
V
oz
g
in·lbf
N·m
Ratings
44
28
245
±30
1845
33
Min
Typ
Max
540
0.23
0.15
-55
150
2500
1.03
29.2
10
1.1
Parameter
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
Terminals and Mounting Screws.
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
RθJC
RθCS
T
J,TSTG
V
Isolation
W
T
Torque
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• UPS
• Welding
• Solar inverters
• Telecom rectifiers
FEATURES
• Fast switching with low EMI
• Very Low trr for maximum reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
APT44H60J
APT44H60J
600V, 44A, 0.011Ω Max, trr ≤250ns
N-Channel Ultrafast Recovery FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and
a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
Microsemi Website - http://www.microsemi.com


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