Elektronische Bauelemente

SSN3043

N-Channel Enhancement Mode Power MOSFET

28-Oct-2013 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Rating

Unit

Steady State

1

280

t = 5 s

1

228

Maximum Junction–Ambient

Steady State Minimum Pad

2

400

°C / W

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

OFF Characteristics

Drain-Source Breakdown Voltage

20

-

-

V

Drain−Source Breakdown Voltage

Temperature Coefficient

-

27

-

mV/°C

Gate-Source Leakage Current

-

-

1

µA

-

-

1

Zero Gate Voltage Drain Current

-

-

10

µA

ON Characteristics

1

Gate Threshold Voltage

0.4

-

1.3

V

Gate Threshold Temperature

Coefficient

-

-2.4

-

mV/°C

Forward Transconductance

-

0.275

-

S

-

1.5

3.4

-

1.6

3.8

-

2.4

4.5

-

5.1

10

Drain-Source On Resistance

-

6.8

15

Dynamic Characteristics

Turn-on Delay Time

-

13

-

Rise Time

-

15

-

Turn-off Delay Time

-

94

-

Fall Time

2

-

55

-

nS

Input Capacitance

2

-

11

-

Output Capacitance

2

-

8.3

-

Reverse Transfer Capacitance

2

-

2.7

-

pF

Source-Drain Diode

-

0.83

1.2

Forward Diode Voltage

-

0.69

-

V

Reverse Recovery Time

-

9.1

-

Charge Time

-

7.1

-

Discharge Time

-

2

-

nS

Reverse Recovery Charge

2

-

3.7

-

nC

dISD/dt=100A/µS

Notes:

1.

Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

2.

Surface−mounted on FR4 board using the minimum recommended pad size.

3.

Pulse Test: Pulse Width ≦ 300 µs, Duty cycle ≦ 2%

4.

Switching characteristics are independent of operating junction temperature.