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SSU07N65SL Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSU07N65SL Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 5 page  Elektronische Bauelemente SSU07N65SL 7A , 650V , RDS(ON) 1.4 N-Ch Enhancement Mode Power MOSFET 08-Oct-2013 Rev. A Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO-263 RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSU07N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V TC=25°C 7 A Continuous Drain Current TC=100°C ID 4 A Pulsed Drain Current IDM 28 A TC=25°C 140 Total Power Dissipation Derate above 25°C PD 1.12 W Single Pulse Avalanche Energy 1 EAS 435 mJ Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient RθJA 0.89 °C / W Maximum Thermal Resistance Junction-Case RθJC 62.5 °C / W Notes: 1. L=30mH,IAS=5A, VDD=100V, RG=25 , Starting TJ =25°C 1 Gate 3 Source 2 Drain Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.00 4.85 c2 1.10 1.65 b 0.51 1.00 b2 1.34 REF L4 0.00 0.30 D 8.0 9.65 C 0.30 0.74 e 2.54 REF L3 1.50 REF L 14.6 15.88 L1 1.78 2.79 L2 1.27 REF E 9.60 10.67 |
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