| Electronic Components Datasheet Search |
|
SSN3541 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
|
|
|||||||||||||||||||||||||||||
SSN3541 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
|
2 / 3 page ![]() SSN3541 0.1 A, 30 V, RDS(ON) 8 Ω Ω Ω Ω N Channel Enhancement MOSFET Elektronische Bauelemente 09-Aug-2012 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V(BR)DSS 30 - - V VGS=0, ID=10µA Gate Threshold Voltage VGS(th) 0.8 - 1.5 V VDS=3V, ID=100µA Gate-Body Leakage Current IGSS - - ±1 µA VDS=0, VGS=±20V Zero Gate Voltage Drain Current IDSS - - 1 µA VDS=30V, VGS=0 Drain-Source On-Resistance 1 RDS(ON) - 5 8 VGS=4V, ID=10mA - 7 13 VGS=2.5V, ID=1mA Forward Transconductance 1 gfs 20 - - mS VDS=3V, ID=10mA Input Capacitance Ciss - 13 - pF VDS=5V, VGS=0, f=1MHz Output Capacitance Coss - 9 - Reverse Transfer Capacitance Crss - 4 - Turn-On Delay Time Td(on) - 15 - nS VDD=5V ID= 10mA VGS=5V RL= 500 RG=10 Rise Time Tr - 35 - Turn-Off Delay Time Td(off) - 80 - Fall Time Tf - 80 - |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |