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SSPS924NE Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSPS924NE Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  SSPS924NE 9.2A , 20V , RDS(ON) 12 mΩ Ω Ω Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 06-Mar-2012 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. B E F G g A e b θ D C d RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ Leader Size DFN3x3-8PP 3K 13 inch MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current 1 TA=25°C ID 9.2 A TA=70°C 7.5 A Pulsed Drain Current 2 IDM 50 A Continuous Source Current (Diode Conduction) 1 IS 2.6 A Total Power Dissipation 1 TA=25°C PD 1.5 W TA=70°C 1 W Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 t ≦ 10sec RθJA 83 °C / W Steady State 120 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. DFN3x3-8PP REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 0.70 0.90 θ 0 ° 12 ° B 3.00BSC b 0.20 0.40 C 0.10 0.25 d 0.65BSC D 1.80 2.3 e 3.00BSC E 3.2BSC g 0.70(TYP.) F 0.01 0.02 G 2.35BSC Top View |
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