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EL2227CS Datasheet(PDF) 3 Page - Elantec Semiconductor

Part # EL2227CS
Description  Dual Very Low Noise Amplifier
PDF  15 Pages
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Manufacturer  ELANTEC [Elantec Semiconductor]
Direct Link  http://www.elantec.com
Logo ELANTEC - Elantec Semiconductor

EL2227CS Datasheet(HTML) 3 Page - Elantec Semiconductor

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EL2227C
Dual Very Low Noise Amplifier
Electrical Characteristics
VS+= +5V, VS - = -5V, RL = 500Ω and CL = 3pF to 0V, RF = 620Ω & TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
Unit
Input Characteristics
VOS
Input Offset Voltage
VCM = 0V
0.2
3
mV
TCVOS
Average Offset Voltage Drift
[1]
-0.6
µV/°C
IB
Input Bias Current
VCM = 0V
-9
-3.7
µA
RIN
Input Impedance
7.3
M
Ω
CIN
Input Capacitance
1.6
pF
CMIR
Common-Mode Input Range
-4.8
3.4
V
CMRR
Common-Mode Rejection Ratio
for VIN from -4.8V to 3.4V
60
97
dB
AVOL
Open-Loop Gain
-5V
≤ VOUT ≤ 5V
70
84
dB
en
Voltage Noise
f = 100kHz
1.9
nV/
√Hz
in
Current Noise
f = 100kHz
1.2
pA/
√Hz
Output Characteristics
VOL
Output Swing Low
RL = 500Ω
-3.8
-3.5
V
RL = 250Ω
-3.7
-3.5
V
VOH
Output Swing High
RL = 500Ω
3.5
3.7
V
RL = 250Ω
3.5
3.6
V
ISC
Short Circuit Current
RL = 10Ω
60
100
mA
Power Supply Performance
PSRR
Power Supply Rejection Ratio
VS is moved from ±2.25V to ±12V
65
95
dB
IS
Supply Current (Per Amplifier)
No Load
4.5
5.5
mA
VS
Operating Range
±2.5
±12
V
Dynamic Performance
SR
Slew Rate
[2]
±2.5V square wave, measured 25%-75%
35
45
V/µS
tS
Settling to 0.1% (AV = +2)
(AV = +2), VO = ±1V
77
ns
BW
-3dB Bandwidth
RF = 358Ω
90
MHz
HD2
2nd Harmonic Distortion
f = 1MHz, VO = 2VP-P, RL = 500Ω, RF = 358Ω
98
dBc
f = 1MHz, VO = 2VP-P, RL = 150Ω, RF = 358Ω
90
dBc
HD3
3rd Harmonic Distortion
f = 1MHz, VO = 2VP-P, RL = 500Ω, RF = 358Ω
94
dBc
f = 1MHz, VO = 2VP-P, RL = 150Ω, RF = 358Ω
79
dBc



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