STF57N65M5 datasheet(3/22 Pages) STMICROELECTRONICS

3 / 22 page

STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5

Electrical ratings

Doc ID 022849 Rev 4

3/22

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220,

D²PAK, I²PAK

TO-220FP

VGS

Gate- source voltage

± 25

Drain current (continuous) at TC = 25 °C

42 (1)

Limited by maximum junction temperature.

Drain current (continuous) at TC = 100 °C

26.5

26.5 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

168

168 (1)

PTOT

Total dissipation at TC = 25 °C

250

IAR

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

960

dv/dt (3)

ISD ≤ 42 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD = 400 V

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

D²PAK I²PAK

TO-220

TO-220FP

Rthj-case Thermal resistance junction-case max

0.50

3.1

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb max(1)

When mounted on 1inch² FR-4 board, 2 oz Cu.

°C/W

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