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P55F6EN Datasheet(PDF) 2 Page - Shindengen Electric Mfg.Co.Ltd

Part # P55F6EN
Description  Power MOSFET
PDF  4 Pages
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Manufacturer  SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
Direct Link  http://www.shindengen.co.jp/
Logo SHINDENGEN - Shindengen Electric Mfg.Co.Ltd

P55F6EN Datasheet(HTML) 2 Page - Shindengen Electric Mfg.Co.Ltd

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■特性図 CHARACTERI
STI
C DI
AGRAMS
0
100
40
40
20
60
80
110
出力特性
Typical Output Characteristics
0
0.2
0.4
0.6
0.8
1
Pulse measurement
Drain・Source Voltage VDS〔V〕
TC=25℃
TYP
VVGS
GS
==5
5VV
VGS=5V
VVCC==10
10VV
VGS=10V
8
8VV8V
6V
伝達特性
Transfer Characteristics
02
13
7
8
5
6
4
Pulse measurement
Gate・Source Voltage VGS〔V〕
VDS=10V
TYP
0
110
100
80
60
20
Tc=150℃
Tc= −55℃
Tc=25℃
Tc=100℃
ドレイン・ソース間オン抵抗−ドレイン電流
Static Drain-Source On-state Resistance vs Drain Current
20
10
1
1
110
10
VGS=10V
Tc=25℃
TYP
Pulse measurement
Drain Current ID〔A〕
ドレイン・ソース間オン抵抗−ケース温度
Static Drain-Source On-static Resistance vs Case Temperature
20
10
1
−55
0
100
150
50
VGS=10V
TYP
Pulse measurement
Case Temperature Tc〔℃〕
ID=27.5A
−55
0
100
150
50
ゲートしきい値電圧−ケース温度
Gate Threshold Voltage vs Case
Temperature
5
4.5
4
3.5
3
2.5
1.5
1
2
VDS=10V
ID=1mA
TYP
Pulse measurement
Case Temperature Tc〔℃〕
安全動作領域
Safe Operating Area
10
110
55
220
165
500
1
0.
1
1
0.
1
100
10
60
Tc=25℃
Single pulse
Drain・Source Voltage VDS〔V〕
DC
10ms
1ms
100μs
10μs
Power Dissipation
Limited
過渡熱抵抗
Transient Thermal Impedance
0.001
0.01
0.1
100
10
1
Time t〔s〕
10-5 10-4 10-3 10-2 10-1 100
102 103
101
θja
θjc
アルミ板:37.5mm×37.5mm
アルミ厚:3mm
キャパシタンス特性
Capacitance Characteristics
10000
1000
100
Tc=25℃
f=1MHz
TYP
0
10
60
50
40
20
30
Drain・Source Voltage VDS〔V〕
Ciss
Ciss
Ciss
Coss
Crss
0
100
60
80
40
20
全損失減少率−ケース温度
Power Derating - Case Temperature
0
25
50
75
125
150
100
Case Temperature Tc〔℃〕
ゲートチャージ特性
0
60
50
30
40
20
10
Gate Charge Characteristics
0
100
120
80
60
20
40
ID=55A
TYP
VGS
VDS
Total Gate Charge Qg〔nC〕
VDD=48V
24V
単発アバランシェエネルギー減少率−チャネル温度
Single Avalanche Energy Derating vs Channel Temperature
100
0
80
60
40
20
0
50
100
150
Starting Channel Temperature Tch〔℃〕
0
20
10
RDS(ON)Limited
(at VGS=10V)
P55F6EN
*Si
newaveは50Hzで測定しています。
* 50Hzsi
newavei
susedf
ormeasur
ement
s.
www.
s
hi
ndengen.
co.
j
p/
pr
oduct
/
s
emi
/
(MOS-p〈2014.03〉)



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