CMBTA13 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

VBE = 0

VCBO

max.

30 V

Collector–emitter voltage (open base)

VBE = 0

VCES

max.

30 V

Emitter–base voltage (open collector)

VEBO

max.

10 V

Collector current (d.c.)

max.

300 mA

Total power dissipation up to Tamb = 25°C

Ptot

max.

250 mW

Storage temperature

Tstg

–55 to +150 °C

Junction temperature

max.

150 °C

THERMAL RESISTANCE

from junction to ambient

Rth j–a

500 K/W

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Collector–emitter breakdown voltage

IC = 100 µAV(BR)CES min.

30 V

Emitter–base cut–off current

VBE = 10 V

IEBO

max.

0.1

µA

Collector–base cut–off current

VCB = 30 V

ICBO

max.

0.1

µA

D.C. current gain

CMBTA13 hFE

min.

5000

IC = 10 mA; VCE = 5 V

CMBTA14 hFE

min. 10000

CMBTA13 hFE

min. 10000

IC = 100 mA; VCE = 5 V

CMBTA14 hFE

min. 20000

Collector–emitter saturation voltage

IC = 100 mA; IB = 0.1 mA

VCEsat

max.

1.5 V

Base–emitter On voltage

IC = 100 mA; VCE = 5 V;

VBE(on)

max.

2 V

Transition frequency at f = 100 MHz

IC = 10 mA; VCE = 5 V

min.

125 MHz

CMBTA13

CMBTA14

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