BDX53 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Collector current

max.

8.0

Collector current (Peak value)

ICM

max.

Base current

max.

0.2

Total power dissipation upto TC=25°C

Ptot

max.

Derate above 25°C

max.

0.48

W/°C

Junction temperature

max.

150

°C

Storage temperature

Tstg

–65 to +150

ºC

THERMAL RESISTANCE

From junction to case

Rth j–c

2.08

°C/W

From junction to ambient

Rth j–a

7.0

°C/W

CHARACTERISTICS

Tamb = 25°C unless otherwise specified

53 53A 53B 53C

54 54A 54B 54C

Collector cutoff current

IB = 0; VCB = 45 V

ICBO

max. 0.2

–

IB = 0; VCB = 60 V

ICBO

max. –

0.2

–

IB = 0; VCB = 80 V

ICBO

max. –

–

0.2

–

IB = 0; VCB = 100 V

ICBO

max. –

–

0.2

IB = 0; VCE = 22 V

ICEO

max. 0.5

–

IB = 0; VCE = 30 V

ICEO

max. –

0.5

–

IB = 0; VCE = 40 V

ICEO

max. –

–

0.5

–

IB = 0; VCE = 50 V

ICEO

max. –

–

0.5

Emitter cut-off current

IC = 0; VEB = 5 V

IEBO

max.

2.0

Breakdown voltages

IC = 100 mA; IB = 0

VCEO(sus)* min. 45

100

IC = 1 mA; IE = 0

VCBO

min. 45

100

IE = 1 mA; IC = 0

VEBO

min.

5.0

Saturation voltages

IC = 3 A; IB = 12 mA

VCEsat*

max.

2.0

VBEsat*

max.

2.5

D.C. current gain

IC = 3 A; VCE = 3 V

hFE*

min.

750

Small signal current gain

IC = 3 A; VCE = 4 V; f = 1.0 MHz

|hfe|

min.

4.0

Output capacitance f = 1.0 MHz

IE = 0; VCB = 10 V

NPN

max.

300

PNP

max.

200

Parallel-diode forward voltage

IF = 3 A

max.

2.5

IF = 8 A

typ.

2.5

* Pulse test: pulse width

≤ 300 µs; duty cycle ≤ 2%

BDX53, BDX53A, BDX53B, BDX53C

BDX54, BDX54A, BDX54B, BDX54C

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