BCW71 datasheet(2/4 Pages) CDIL

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Continental Device India Limited

Data Sheet

Page 2 of 4

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

VCB0

max.

50 V

Collector–emitter voltage (open base)

IC = 2 mA

VCE0

max.

45 V

Emitter–base voltage (open collector)

VEB0

max.

5 V

Collector current (d.c.)

max.

100 mA

Collector current (peak value)

ICM

max.

200 mA

Total power dissipation up to Tamb = 25 °C

Ptot

max.

250 mW

Storage temperature

Tstg

–55 to +150 °C

Junction temperature

max.

150 ° C

THERMAL RESISTANCE

From junction to ambient

Rth j–a =

500 K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector cut–off current

IE = 0; VCB = 20 V

ICB0

100 nA

IE = 0; VCB = 20 V; Tj = 100 °C

ICB0

<10

µA

Base emitter voltage

IC = 2 mA; VCE = 5 V

VBE

550 to 700 mV

Saturation voltages

IC = 10 mA; lB = 0,5 mA

typ.

120 mV

VCEsat <

250 mV

VBEsat typ.

750 mV

VCEsat typ.

210 mV

IC = 50 mA; lB = 2,5 mA

VBEsat typ.

850 mV

D.C. current gain

BCW71

BCW72

IC = 10 µA; VCE = 5 V

hFE

typ.

150

110

200

IC = 2 mA; VCE = 5 V

hFE

220

450

Collector capacitance at f = 1 MHz

IE = Ie = 0; VCB = 10 V

typ.

2,5

Transition frequency at f = 35 MHz

IC = 10 mA; VCE = 5 V

typ.

300

MHz

Noise figure at RS = 2 kΩ

IC = 200 µA; VCE = 5 V

f = 1 kHz; B = 200 Hz

BCW71

BCW72

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