FMMT549 / FMMT549A

Document Number: DS33098 Rev. 4 - 2

2 of 5

www.diodes.com

September 2011

© Diodes Incorporated

A Product Line of

Diodes Incorporated

FMMT549 / FMMT549A

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-35

V

Collector-Emitter Voltage

-30

V

Emitter-Base Voltage

-5

V

Continuous Collector Current

-1

A

Peak Pulse Current

-2

A

Base Current

-200

mA

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 4)

500

mW

Thermal Resistance, Junction to Ambient

(Note 4)

250

°C/W

Thermal Resistance, Junction to Lead

(Note 5)

197

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

-35

-

-

V

Collector-Emitter Breakdown Voltage (Note 6)

-30

-

-

V

Emitter-Base Breakdown Voltage

-5

-

-

V

Collector Cutoff Current

-

-

-0.1

µA

-

-

-10

Emitter Cutoff Current

-

-

-0.1

µA

Static Forward Current Transfer Ratio (Note 6)

70

200

-

-

80

130

-

40

80

-

FMMT549

100

160

300

-

FMMT549A

150

200

500

-

Collector-Emitter Saturation Voltage

-

-250

-500

mV

-

-500

-750

FMMT549A

-

-

-300

mV

Base-Emitter Saturation Voltage (Note 6)

-

-900

-1250

mV

Base-Emitter Turn-On Voltage (Note 6)

-

-850

-1000

mV

Output Capacitance

-

-

25

pF

Transition Frequency

100

-

-

MHz

f = 100MHz

Switching Times

-

50

-

ns

-

300

-

ns

Notes:

4. For a device surface mounted FR4 PCB with minimum recommended pad layout; high coverage of single sided 1 oz copper, in still air conditions; the

device is measured when operating in a steady-state condition.

5. Thermal resistance from junction to solder-point (at the end of the collector lead).

6. Measured under pulsed conditions. Pulse width

≤ 300 µs. Duty cycle ≤ 2%