GaN Hybrid Power Amplifier

HT2626-15M

Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com

All specifications may change without notice

US Facilities : 919-677-8780 / sales@rfhicusa.com

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Version 1.0

Absolute Maximum Ratings

PARAMETER

UNIT

RATING

SYMBOL

Gate-Source Voltage

V

-10 ~ 0

Vgs2

Drain-Source Voltage

V

7

Vds1

50

Vds2

Gate Current

mA

4.0

Igs2

Operating Junction Temperature

°C

225

Operating Case Temperature

°C

-30 ~ 85

Storage Temperature

°C

-40 ~ 100

Maximum RF Input Level

dBm

20

Pin

Operating Voltage & Input Level

PARAMETER

UNIT

MIN

TYP

MAX

SYMBOL

Drain Voltage

V

4.75

5

5.25

Vds1

27.5

28

28.5

Vds2

Gate Voltage (on-stage)

V

-

-3

-2

Vgs 2

Gate Voltage (off-stage)

V

-

-8

-

Vgs 2

Idq2 (Control Vgs2)

mA

100

105

110

Idq2

RF Input Level

dBm

-

-

15

Pin

Block Diagram

E-pHEMT GaAs

GaN on SiC