LET9150 datasheet(1/12 Pages) STMICROELECTRONICS

Part #	LET9150

Description	RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 12 page

December 2010

Doc ID 16369 Rev 6

1/12

12

LET9150

RF power transistor from the LdmoST family

of n-channel enhancement-mode lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration push-pull

■ POUT = 150 W with 20 dB gain @ 860 MHz

■ BeO-free package

Description

The LET9150 is a common source n-channel

enhancement-mode lateral field-effect RF power

transistor designed for broadband commercial

and industrial applications at frequencies up to 2

GHz.

Figure 1.

Pin connection

M246

Epoxy sealed

1-2 Drain

4-5 Gate

3 Source

12

4

5

Table 1.

Device summary

Order code

Package

Branding

LET9150

M246

LET9150

www.st.com

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LET9150 Datasheet(PDF) 1 Page - STMicroelectronics

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