FT0004 datasheet(2/2 Pages) SSDI

2 / 2 page

SOLID STATE DEVICES, INC.

SFF1310M

SFF1310Z

PRELIMINARY

14830 Valley View Av. * La Mirada, Ca 90670

Phone: (562) 404-7855 * Fax: (562) 404-1773

ELECTRICAL CHARACTERISTICS @ TJ =25

oC (Unless Otherwise Specified)

Drain to Source Breakdown Voltage

(VGS =0 V, ID =250

:A)

BVDSS

RATING

SYMBOL

MIN

TYP

MAX

UNIT

200

Drain to Source ON State Resistance

(VGS = 10 V, 60% of Rated ID)

RDS(on)

0.050

Gate Threshold Voltage

(VDS =VGS, ID = 4mA)

VGS(th)

4.0

2.0

É)

Forward Transconductance

(VDS > ID(on) x RDS (on) Max, IDS = 50% rated ID)

Zero Gate Voltage Drain Current

(VGS = 0V)

IDSS

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

IGSS

+100

-100

At rated VGS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = 10 V

50% rated VDS

50% rated ID

Qgs

Qgd

190

220

120

nsec

Turn on Delay Time

Rise Time

Turn off DELAY Time

Fall Time

VDD =50%

rated VDS

50% rated ID

RG = 6.2

td (on)

td (off)

110

130

VSD

1.50

Diode Reverse Recovery Time

Reverse Recovery Charge

1.5

trr

QRR

225

TJ =25

IF = 10A

di/dt = 100A/

:sec

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS =0 Volts

VDS =25 Volts

f =1 MHz

Ciss

Coss

Crss

4400

800

285

nsec

ON State Drain Current

(VDS > ID(on) x RDS(on) Max, VGS = 10 V)

ID(on)

Diode Forvard Voltage

(IS = rated ID, VGS = 0V, TJ = 25

oC)

250

1000

NOTES:

gfs

VDS = max rated Voltage, TA = 25

VDS = 80% rated VDS, TA = 125

ID = 37.5A

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