Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SFF4393A2 __ __

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TX = TX Level

TXV = TXV Level

S = S Level

SFF4393A2GW

Dual Microminiature Package

50 mA 40 Volts

Dual N-Channel JFET Transistor

Features:

• Low ON Resistance

• Low Capacitance, < 4 pF

• Fast Switching, t

• Used for Analog Switches, Choppers, Current

Limiters, and Sample-and-Hold Applications

• TX, TXV, and S-Level Screening Available.

Consult Factory.

Maximum Ratings

Symbol

Value

Units

Drain – Source Voltage

40

Volts

Drain – Gate Voltage

40

Volts

Reverse Gate – Source Voltage

40

Volts

Drain Current

50

mA

Per Device

Total

500

660

mW

mW

Maximum Thermal Resistance

Junction to Ambient

5/

245

ºC/W

Lead Temperature

(1/16” from the seated surface for 60 seconds)

300

ºC

Operating & Storage Temperature

-65 to +200

ºC

PACKAGE OUTLINE: GULLWING (GW)

.193

. 015±.010

.040

±.010

.350

±.01 0

6x R.0 10

.033

3x .015

.010

.107

.130

2x .050

(=.1 00)

6x .030

.107

.034

.125

6x .010

.025

5x R.018

.015

.035

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0010B

DOC