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STL70N10F3 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL70N10F3
Description  N-channel 100 V, 0.0078, 16 A STripFET III Power MOSFET in PowerFLAT 5x6 package
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL70N10F3 Datasheet(HTML) 3 Page - STMicroelectronics

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STL70N10F3
Electrical ratings
Doc ID 018794 Rev 3
3/17
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
The value is rated according to Rthj-c.
Drain current (continuous) at TC = 25 °C
82
A
ID
(1)
Drain current (continuous) at TC = 100 °C
58
A
ID
(2)
2.
The value is rated according to Rthj-pcb.
Drain current (continuous) at Tpcb = 25 °C
16
A
IDM
(3),(2)
3.
Pulse width limited by safe operating area.
Drain current (pulsed)
64
A
PTOT
(1)
Total dissipation at TC = 25 °C
136
W
PTOT
(2)
Total dissipation at Tpcb = 25 °C
4
W
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
1.1
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Thermal resistance junction-pcb
31
°C/W
Table 4.
Avalanche data
Symbol
Parameter
Value
Unit
IAV
Not-repetitive avalanche current,
(pulse width limited by Tj max)
16
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAV , VDD = 50 V)
770
mJ



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