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BUL52B Datasheet(PDF) 2 Page - Savantic, Inc.

Part # BUL52B
Description  Silicon PNP Power Transistors
PDF  3 Pages
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Manufacturer  SAVANTIC [Savantic, Inc.]
Direct Link  http://www.svntc.com
Logo SAVANTIC - Savantic, Inc.

BUL52B Datasheet(HTML) 2 Page - Savantic, Inc.

  BUL52B Datasheet HTML 1Page - Savantic, Inc. BUL52B Datasheet HTML 2Page - Savantic, Inc. BUL52B Datasheet HTML 3Page - Savantic, Inc.  
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SavantIC Semiconductor
Product Specification
2
Silicon PNP Power Transistors
BUL52B
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA ;IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
800
V
V(BR)EBO
Emitter-base breakdwon voltage
IE=1mA ;IC=0
10
V
VCEsat-1
Collector-emitter saturation voltage
IC=0.1A ;IB=20mA
0.1
V
VCEsat-2
Collector-emitter saturation voltage
IC=1A; IB=0.2A
0.2
V
VCEsat-3
Collector-emitter saturation voltage
IC=2A; IB=0.4A
0.3
V
VCEsat-4
Collector-emitter saturation voltage
IC=3A; IB=0.6A
0.5
V
VBEsat-1
Base-emitter saturation voltage
IC=1A; IB=0.2A
1.0
V
VBEsat-2
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.1
V
VBEsat-3
Base-emitter saturation voltage
IC=3A ;IB=0.6A
1.2
V
ICBO
Collector cut-off current
VCB=800V; IE=0
TC=125
10
100
µA
ICEO
Collector cut-off current
VCE=400V; IB=0
100
µA
IEBO
Emitter cut-off current
VEB=9V; IC=0
TC=125
10
100
µA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20
hFE-2
DC current gain
IC=1A ; VCE=5V
15
45
hFE-3
DC current gain
IC=3A ; VCE=1V
TC=125
10
5
fT
Transition frequency
IC=0.2A ; VCE=4V
20
MHz
Cob
Output capacitance
VCB=20V ;f=1MHz
40
pF



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