IXTH3N150 datasheet(1/4 Pages) IXYS

Part #	IXTH3N150

Description	N-Channel Enhancement Mode

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

DS100286A(05/12)

High Voltage

Power MOSFET

Features

International Standard Package

Fast Intrinsic Diode

Avalanche Rated

Molding Epoxies meet UL 94 V-0

Flammability Classification

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

IXTH3N150

V

DSS

= 1500V

I

D25

=3A

R

DS(on) ≤

≤≤≤≤

7.3

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1500

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C3

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

9A

I

A

T

C = 25°C3

A

E

AS

T

C = 25°C

250

mJ

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

5

V/ns

P

D

T

C = 25°C

250

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque

1.13 / 10

Nm/lb.in.

Weight

6

g

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247

G

S

Tab

D

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1500

V

GS(th)

V

DS = VGS, ID = 250μA

2.5

5.0

V

I

GSS

V

GS = ±30V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

10

μA

T

J = 125°C

100

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

7.3

Ω

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

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