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IXTH130N15T Datasheet(PDF) 2 Page - IXYS Corporation

Part # IXTH130N15T
Description  N-Channel Enhancement Mode
PDF  5 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTH130N15T Datasheet(HTML) 2 Page - IXYS Corporation

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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH130N15T
IXTQ130N15T
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 10 V; ID = 60 A, Note 1
60
100
S
C
iss
9800
pF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
1450
pF
C
rss
320
pF
t
d(on)
Resistive Switching Times
23
n s
t
r
V
GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
16
n s
t
d(off)
R
G = 2.5 Ω (External)
57
n s
t
f
27
n s
Q
g(on)
113
nC
Q
gs
V
GS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
32
nC
Q
gd
31
nC
R
thJC
0.20 °C/W
R
thCS
0.25
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS = 0 V
130
A
I
SM
Pulse width limited by T
JM
330
A
V
SD
I
F = 50 A, VGS = 0 V, Note 1
1.2
V
t
rr
I
F = 50 A, -di/dt = 100 A/μs
100
n s
V
R = 25 V, VGS = 0 V
Notes: 1. Pulse test, t
≤ 300 ms, duty cycle, d ≤ 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
TO-3P (IXTQ) Outline
Pins:
1 - Gate
2 - Drain
3 - Source
4, TAB - Drain
TO-247AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
ÆP
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1
2
3
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
7,063,975B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728B1
6,583,505
6,710,463
6,771,478B2
7,071,537



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