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IXTH130N15T Datasheet(PDF) 2 Page - IXYS Corporation |
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IXTH130N15T Datasheet(HTML) 2 Page - IXYS Corporation |
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2 / 5 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXTH130N15T IXTQ130N15T Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. g fs V DS= 10 V; ID = 60 A, Note 1 60 100 S C iss 9800 pF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 1450 pF C rss 320 pF t d(on) Resistive Switching Times 23 n s t r V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 16 n s t d(off) R G = 2.5 Ω (External) 57 n s t f 27 n s Q g(on) 113 nC Q gs V GS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 32 nC Q gd 31 nC R thJC 0.20 °C/W R thCS 0.25 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values T J = 25°C unless otherwise specified) Min. Typ. Max. I S V GS = 0 V 130 A I SM Pulse width limited by T JM 330 A V SD I F = 50 A, VGS = 0 V, Note 1 1.2 V t rr I F = 50 A, -di/dt = 100 A/μs 100 n s V R = 25 V, VGS = 0 V Notes: 1. Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 %; 2. On through-hole packages, R DS(on) Kelvin test contact location must be 5 mm or less from the package body. TO-3P (IXTQ) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain TO-247AD Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ÆP 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 1 2 3 PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 |
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