G8421 datasheet(2/4 Pages) HAMAMATSU

2 / 4 page

InGaAs PIN photodiode

G8421/G8371/G5851 series

WAVELENGTH (µm)

(Typ.)

1.4

1.2

1.0

0.8

0.2

0.4

1.4

1.2

1.0

0.8

0.6

1.6

1.8

2.2

2.0

T= -10 ˚C

T= -20 ˚C

T=25 ˚C

0.8

1.6

2.2

2.6

WAVELENGTH (µm)

-1

(Typ.)

1.2

1.4

1.8

2.4

0.01

0.1

REVERSE VOLTAGE (V)

1 nA

10 nA

100 nA

µA

(Typ. Ta=25 ˚C)

G8371-03

G8371-01

G8421-03

G8421-05

0.01

0.1

REVERSE VOLTAGE (V)

100 pA

(Typ.)

1 nA

10 nA

100 nA

µA

G5851-13 (T= -10 ˚C)

G5851-23 (T= -20 ˚C)

G5851-11 (T= -10 ˚C)

G5851-103 (T= -10 ˚C)

G5851-203 (T= -20 ˚C)

G5851-21

(T= -20 ˚C)

0.1

REVERSE VOLTAGE (V)

1 pF

(Typ. Ta=25 ˚C, f=1 MHz)

100 pF

10 nF

10 pF

1 nF

G8371-03

G5851-13/-23

G8371-01

G5851-11/-21

G8421-05

G8421-03

G5851-103/-203

1 M

Ω

-40

-20

100 k

Ω

1 k

Ω

100

Ω

10 k

Ω

10 M

Ω

(Typ. VR=10 mV)

100

ELEMENT TEMPERATURE (˚C)

G8371-03

G5851-13/-23

G8421-05

G8421-03

G5851-103/-203

G8371-01

G5851-11/-21

I Spectral response

KIRDB0221EA

I Photo sensitivity temperature characteristic

KIRDB0208EA

I Dark current vs. reverse voltage

I Terminal capacitance vs. reverse voltage

KIRDB0233EA

I Shunt resistance vs. element temperature

KIRDB0234EA

Non-cooled type

TE-cooled type

KIRDB0232E

KIRDB0223EA

G8421 Datasheet(PDF) 2 Page - Hamamatsu Corporation

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