2SC2735 datasheet(2/10 Pages) HITACHI

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2SC2735

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

Collector to emitter voltage

CEO

Emitter to base voltage

EBO

Collector current

Collector power dissipation

150

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

—

C = 10 µA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

—

C = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

3—

—

E = 10 µA, IC = 0

Collector cutoff current

CBO

—

0.5

µAV

CB = 10 V, IC = 0

Collector to emitter saturation

voltage

CE(sat)

—

1.0

C = 20 mA, IB = 4 mA

DC current transfer ratio

—

CE = 10 V, IC = 10 mA

Collector output capacitance

Cob

—

0.85

1.5

CB = 10 V, IE = 0, f = 1 MHz

Gain bandwidth product

600

1200

—

MHz

CE = 10 V, IC = 10 mA

Oscillating output voltage

OSC1

—

210

—

CC = 12 V, IC = 7 mA,

OSC = 300 MHz

OSC2

—

130

—

CC = 12 V, IC = 7 mA,

OSC = 930 MHz

Conversion gain

—

CC = 12 V, IC = 2 mA,

f = 200 MHz,

OSC = 230 MHz (0dBm)

Noise figure

—

6.5

—

CC = 12 V, IC = 2 mA,

f = 200 MHz,

OSC = 230 MHz (0dBm)

Note:

Marking is “JC”.

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