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2SH21 Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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2SH21 Datasheet(HTML) 1 Page - Hitachi Semiconductor |
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1 / 8 page  Application High speed power switching Features • High speed switching • Low on saturation voltage Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to emitter voltage VCES 600 V ——————————————————————————————————————————— Gate to emitter voltage VGES ±20 V ——————————————————————————————————————————— Collector current IC 50 A ——————————————————————————————————————————— Collector peak current ic(peak) 100 A ——————————————————————————————————————————— Collector dissipation PC* 150 W ——————————————————————————————————————————— Channel temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * Value at Tc = 25°C 1. Gate 2. Collector 3. Emitter TO–3P 1 2 3 1 2 3 1 2SH21 Silicon N-Channel IGBT 1st. Edition Feb. 1995 ADE–208–294 (Z) |
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