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ML610Q411 Datasheet(PDF) 21 Page - List of Unclassifed Manufacturers |
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ML610Q411 Datasheet(HTML) 21 Page - List of Unclassifed Manufacturers |
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21 / 36 page ![]() FEDL610Q411-02 LAPIS Semiconductor ML610Q411/ML610Q412/ML610Q415 21/36 OPERATING CONDITIONS OF FLASH ROM (VSS = AVSS = 0V) Parameter Symbol Condition Range Unit Operating temperature TOP At write/erase 0 to +40 C VDD At write/erase *1 2.75 to 3.6 VDDL At write/erase *1 2.5 to 2.75 Operating voltage VPP At write/erase *1 7.7 to 8.3 V Write cycles CEP 80 cycles Data retention YDR 10 years *1: Those voltages must be supplied to V DDL pin and VPP pin when programming and eraseing Flash ROM. VPP pin has an internal pulldown resister. DC CHARACTERISTICS (1/5) (VDD = 1.1 to 3.6V, AVDD = 2.2 to 3.6V, VSS = AVSS = 0V, Ta = 20 to +70C, Ta = 40 to +85C for P version, unless otherwise specified) (1/5) Rating Parameter Symbol Condition Min. Typ. Max. Unit Measuring circuit Ta = 25 C Typ. 10% 500 Typ. 10% kHz 500kHz RC oscillation frequency fRC VDD = 1.3 to 3.6V * 3 Typ. 25% 500 Typ. 25% kHz Low-speed crystal oscillation start time* 2 TXTL 0.3 2 s 500kHz RC oscillation start time TRC 50 500 s Low-speed oscillation stop detect time *1 TSTOP 0.2 3 20 ms Reset pulse width PRST 200 Reset noise elimination pulse width PNRST 0.3 s Power-on reset activation power rise time TPOR 10 ms 1 * 1: When low-speed crystal oscillation stops for a duration more than the low-speed oscillation stop detect time, the system is reset to shift to system reset mode. ML610Q411PC and ML610Q415 does not have this characteristic. * 2 : Use 32.768KHz Crystal Oscillator C-001R (Epson Toyocom) with capacitance CGL/CDL=0pF. * 3 : Recommended operating temperature (Ta = 40 to +85C for P version, Ta = 20 to +70C for non-P version) RESET RESET_N RESET_N pin reset VDD 0.9xVDD 0.1xVDD TPOR Power on reset PRST VIL1 VIL1 |
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