ICE4N73FP

N-Channel Enhancement Mode MOSFET

Features:

Low

Ultra Low Gate Charge

High dv/dt Capability

High Unclamped Inductive Switching (UIS) Capability

High Peak Current Capability

Increased Transconductance Performance

Optimized Design For High Performance Power Systems

Symbol

Parameter

Value

Unit

Conditions

Continous Drain Current

4

A

Pulsed Drain Current

12

A

Avalanche Energy, Single Pulse

80

mJ

Avalanche Current, Repetitive

2

A

dv/dt

MOSFET dv/dt Ruggedness

50

V/ns

Gate Source Voltage

V

Static

AC (f>Hz)

Power Dissipation

35

W

Operating and Storage Temperature

-55 to +150

°C

Mounting Torque

50

Ncm

M 2.5 screws

Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified

Product Summary

4A

Max

730V

Min

1.0Ω

Typ

21nC

Typ

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com

1

Thermal Characteristics

Thermal Resistance, Junction to Case

-

-

3.5

°C/W

Thermal Resistance, Junction to Ambient

-

-

68

Leaded

Soldering Temperature, Wave Soldering Only Al-

lowed At Leads

-

-

260

°C

1.6mm (0.063in.) from Case for 10s

Pin Description:

TO-220

D

G

S

Symbol

Parameter

Values

Unit

Conditions

Min

Typ

Max

Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified

Static Characteristics

Drain to Source Breakdown Voltage

730

770

-

V

V

GS(th)

Gate Threshold Voltage

2.1

3

3.9

Zero Gate Voltage Drain Current

-

0.5

5

µA

-

-

100

Gate Source Leakage Current

-

-

100

nA

Drain to Source On-State Resistance

-

1.0

1.2

Ω

-

2.6

-

Gate Resistance

-

6.3

-

Ω

f = 1 MHz, open drain