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other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

FEATURES 

TIGHT MATCHING  ≤ 2mV 

THERMAL TRACKING ≤ 3µV/ °C

ABSOLUTE MAXIMUM RATINGS 

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +150°C 

Operating Junction Temperature ‐55°C to +150°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

TBD 

Maximum Currents 

Collector Current 

50mA 

Maximum Voltages 

Collector to Collector Voltage 

80V 

  

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 

SYMBOL 

CHARACTERISTIC 

MIN 

TYP 

MAX 

UNITS 

CONDITIONS 

Base Emitter Voltage Differential 

‐‐ 

‐‐ 

2 

mV 

 

Base Emitter Voltage Differential 

Change with Temperature 

‐‐ 

‐ 

3 

µV/°C 

Base Current Differential 

‐‐ 

‐‐ 

10 

nA 

Base Current Differential 

 Change with Temperature 

‐‐ 

‐‐ 

0.5 

nA/°C 

TA = ‐40°C to +85°C 

DC Current Gain Differential 

‐‐ 

‐‐ 

10 

% 

 

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTICS 

MIN. 

TYP. 

MAX. 

UNITS 

CONDITIONS 

Collector to Base Voltage 

45 

‐‐ 

‐‐ 

V 

IC = 10mA, IE = 0 

Collector to Emitter Voltage 

45 

‐‐ 

‐‐ 

V 

Emitter‐Base Breakdown Voltage 

6.2 

‐‐ 

‐‐ 

V 

Collector to Collector Voltage 

80 

‐‐ 

‐‐ 

V 

 

 

DC Current Gain 

150 

‐‐ 

‐‐ 

 

120 

‐‐ 

‐‐ 

 

100 

‐‐ 

‐‐ 

 

Collector Saturation Voltage 

‐‐ 

‐‐ 

0.25 

V 

Emitter Cutoff Current 

‐‐ 

‐‐ 

0.2 

nA 

Collector Cutoff Current 

‐‐ 

‐‐ 

0.2 

nA 

Output Capacitance 

‐‐ 

‐‐ 

2 

pF 

Collector to Collector Leakage Current 

‐‐ 

‐‐ 

1 

nA 

Current Gain Bandwidth Product 

‐‐ 

‐‐ 

600 

MHz 

NF 

Narrow Band Noise Figure 

‐‐ 

‐‐ 

3 

dB 

f = 1KHz 

Notes: 

1. Absolute Maximum ratings are limiting values above which serviceability may be impaired

2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 

 

 

 

 

LS3250A

MONOLITHIC DUAL

NPN TRANSISTOR

LS3250A Features:

Tight matching

Low Output Capacitance

The LS3250A is a monolithic pair of NPN transistors

mounted in a single P-DIP package. The monolithic

dual chip design reduces parasitics and is ideal for use

in tracking applications.

The 8 Pin P-DIP provides ease of manufacturing, and

the symmetrical pinout prevents improper orientation.

(See Packaging Information).

Linear Systems Log Conformance Monolithic Dual NPN

Available Packages:

LS3250A in P-DIP

LS3250A available as bare die

Please contact Micross for full package and die dimensions:

P-DIP (Top View)