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2SD799 Datasheet(PDF) 2 Page - Tiger Electronic Co.,Ltd |
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2SD799 Datasheet(HTML) 2 Page - Tiger Electronic Co.,Ltd |
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2 / 3 page  2 Silicon NPN Power Transistors 2SD799 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.04A 2.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.04A 2.5 V ICBO Collector cut-off current VCB=600V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE-1 DC current gain IC=2A ; VCE=2V 600 hFE-2 DC current gain IC=4A ; VCE=2V 100 VECF Diode forward voltage IE=4A; IB=0 3.0 V COB Collector output capacitance f=1MHz;VCB=50V 35 pF |
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