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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

FEATURES 

DIRECT REPLACEMENT FOR SILICONIX SST112 

LOW GATE LEAKAGE CURRENT 

5pA 

FAST SWITCHING 

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐55°C to +150°C 

Operating Junction Temperature ‐55°C to +135°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

350mW 

MAXIMUM CURRENT

Gate Current (Note 1) 

50mA 

MAXIMUM VOLTAGES 

Gate to Drain Voltage 

Gate to Source Voltage 

  

SST112 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Gate to Source Breakdown Voltage ‐35 

‐‐ 

‐‐ 

 

 

V 

Gate to Source Cutoff Voltage ‐1 

‐‐ 

‐5 

Gate to Source Forward Voltage 

‐‐ 

0.7 

‐‐ 

Drain to Source Saturation Current (Note 2) 

5 

‐‐ 

‐‐ 

mA 

Gate Reverse Current 

‐‐ 

‐0.005 ‐1 

nA 

Gate Operating Current 

‐‐ 

‐0.5 

‐‐ 

pA 

VDG = 15V,  ID = 10mA 

Drain Cutoff Current 

‐‐ 

 0.005 

1 

nA 

VDS = 5V, VGS = ‐10V 

Drain to Source On Resistance 

‐‐ 

‐‐ 

50 Ω 

IG = 1mA,  VDS = 0V 

 

 

    

 

SST112 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Forward Transconductance 

‐‐ 

6 

‐‐ 

mS 

VDS = 20V,  ID = 1mA , f = 1kHz 

Output Conductance 

‐‐ 

25 

‐‐ 

µS 

Drain to Source On Resistance 

‐‐ 

‐‐ 

50 Ω 

Input Capacitance 

‐‐ 

7 

12 

pF 

 

Reverse Transfer Capacitance 

‐‐ 

3 

5 

Equivalent Noise Voltage 

‐‐ 

3 

‐‐ 

nV/√Hz 

 

 

    

 

SST112 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 

SYMBOL 

CHARACTERISTIC  

UNITS 

CONDITIONS 

Turn On Time 

2  

 

ns 

 

See Switching Circuit 

Turn On Rise Time 

2 

Turn Off Time 

6 

Turn Off Fall Time 

15 

                                                                                                                 

SST112 SWITCHING CIRCUIT PARAMETERS                                                                                                                          

1600Ω 

 

6mA  

  

 

  

 

  

 

  

 

  

 

SST112

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix SST112

This n-channel JFET is optimised for low noise high

performance switching. The part is particularly suitable

for use in low noise audio amplifiers. The SOT-23

package is well suited for cost sensitive applications

and mass production.

(See Packaging Information).

SST112 Applications:

Analog Switches

Commutators

Choppers

SST112 Benefits:

Short Sample & Hold Aperture Time

Low insertion loss

Low Noise

Micross Components Europe

Available Packages:

SST112 in SOT-23

SST112 in bare die.

Please contact Micross for full

package and die dimensions

Note 1 ‐ Absolute maximum ratings are limiting values above which SST112 serviceability may be impaired.  Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%

Tel: +44 1603 788967

SWITCHING TEST CIRCUIT

SOT-23 (Top View)