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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility

is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication

or otherwise under any patent or patent rights of Linear Integrated Systems.

FEATURES 

DIRECT REPLACEMENT FOR SILICONIX SST5019 

ZERO OFFSET VOLTAGE 

LOW ON RESISTANCE 

ABSOLUTE MAXIMUM RATINGS  

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐55°C to +200°C 

Operating Junction Temperature ‐55°C to +200°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

500mW 

MAXIMUM CURRENT

Gate Current (Note 1) 

MAXIMUM VOLTAGES 

Gate to Drain Voltage 

Gate to Source Voltage 

  

SST5019 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Gate to Source Breakdown Voltage 

30 

‐‐ 

‐‐ 

 

V 

Gate to Source Cutoff Voltage 

‐‐ 

‐‐ 

5 

Drain to Source On Voltage 

‐‐ 

‐‐ 

‐0.5 

VGS = 0V, ID = ‐3mA 

Drain to Source Saturation Current (Note 2) ‐5 

‐‐ 

‐‐ 

mA 

VDS = ‐20V, VGS = 0V 

Gate Reverse Current 

‐‐ 

‐‐ 

2 

nA 

VGS = 15V,  VDS = 0V 

Drain Cutoff Current 

‐‐ 

‐‐ 

‐10 

VDS = ‐15V, VGS = 12V 

‐‐ 

‐‐ 

‐10 

µA 

VDS = ‐15V, VGS = 7V 

Drain Reverse Current 

‐‐ 

‐‐ 

‐2 

nA 

VDG = ‐15V, IS = 0A 

Drain to Source On Resistance 

‐‐ 

‐‐ 

150 Ω 

ID = ‐1mA,   VGS = 0V 

SST5019 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Drain to Source On Resistance 

‐‐ 

‐‐ 

150 Ω 

Input Capacitance 

‐‐ 

‐‐ 

45 

pF 

Reverse Transfer Capacitance 

‐‐ 

‐‐ 

10 

SST5019 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 

SYMBOL 

CHARACTERISTIC  

UNITS 

CONDITIONS 

Turn On Time 

15  

 

ns 

 

See Switching Circuit 

Turn On Rise Time 

75 

Turn Off Time 

25 

Turn Off Fall Time 

100 

                                                                                                                 

                                                                                                                                                                                                              SWITCHING TEST CIRCUIT

SST5019 SWITCHING CIRCUIT PARAMETERS                                                                                                                          

8V  

1.8kΩ 

 

390Ω 

 

  

 

  

 

  

 

  

 

  

 

The SST5019 is a single P-Channel JFET switch

SST5019

P-CHANNEL JFET

Linear Systems replaces discontinued Siliconix SST5019

This p-channel analog switch is designed to provide low

on-resistance and fast switching.

The SOT-23 package provides ease of manufacturing,

and a lower cost assembly option.

(See Packaging Information).

SST5019 Applications:

Analog Switches

Commutators

Choppers

SST5019 Benefits:

Low Insertion Loss

No offset or error voltage generated by closed

switch

Purely resistive

Micross Components Europe

Available Packages:

SST5019 in SOT-23

SST5019 in bare die.

Please contact Micross for full

package and die dimensions

Note 1 ‐  Absolute maximum ratings are limiting values above which SST5019 serviceability may be impaired.

Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%

Tel: +44 1603 788967

SOT-23 (Top View)