FZT788ATA datasheet(2/2 Pages) ZETEX

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SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FEATURES

* Low equivalent on-resistance; RCE(sat) 93mΩ at 3A

* Gain of 300 at IC=2 Amps and Very low saturation voltage

APPLICATIONS

* Battery powered circuits

COMPLEMENTAY TYPE FZT688B

PARTMARKING DETAIL FZT788B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-15

Collector-Emitter Voltage

VCEO

-15

Emitter-Base Voltage

VEBO

-5

Peak Pulse Current

ICM

-8

Continuous Collector Current

-3

Power Dissipation at Tamb=25°C

Ptot

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown Voltage V(BR)CBO -15

IC=-100µA

Collector-Emitter Breakdown Voltage V(BR)CEO -15

IC=-10mA*

Emitter-Base Breakdown Voltage

V(BR)EBO -5

IE=-100µA

Collector Cut-Off Current

ICBO

-0.1

VCB=-10V

Emitter Cut-Off Current

IEBO

-0.1

VEB=-4V

Collector-Emitter Saturation

Voltage

VCE(sat)

-0.15

-0.25

-0.45

-0.5

IC=-0.5A, IB=-2.5mA*

IC=-1A, IB=-5mA*

IC=-2A, IB=-10mA*

IC=-3A, IB=-50mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-0.9

IC=-1A, IB=-5mA*

Base-Emitter Turn-On Voltage

VBE(on)

-0.75

IC=-1A, VCE=-2V*

Static Forward Current Transfer

Ratio

hFE

500

400

300

150

1500

IC=-10mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-6A, VCE=-2V*

Transition Frequency

100

MHz

IC=-50mA, VCE=-5V

f=50MHz

Input Capacitance

Cibo

225

VEB=-0.5V, f=1MHz

Output Capacitance

Cobo

VCB=-10V, f=1MHz

Switching Times

ton

toff

400

IC=-500mA, IB1=-50mA

IB2=-50mA, VCC=-10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

FZT788B

3 - 244

-55°C

+25°C

+100°C

+25°C

-55°C

0.01

0.1

0.8

0.6

1.6

0.01

0.1

0.01

0.1

1.0

0.8

0.6

0.4

0.2

1.6

1.4

1.2

0.01

0.1

1.0

0.8

0.6

0.4

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

VCE(sat) v IC

I+ -

Collector Current (Amps)

VCE(sat) v IC

I+ -

Collector Current (Amps)

I+ -

Collector Current (Amps)

I+ -

Collector Current (Amps)

hFE v IC

VBE(sat) v IC

I+ -

Collector Current (Amps)

VBE(on) v IC

1200

900

600

Tamb=25°C

-55°C

+25°C

+100°C

+175°C

VCE=2V

0.01

0.1

1.0

0.8

0.6

0.4

0.2

1.6

1.4

1.2

-55°C

+25°C

+100°C

+175°C

IC/IB=200

IC/IB=10

IC/IB=200

IC/IB=100

1.8

1.4

1.2

1.0

0.4

0.2

IC/IB=200

VCE=2V

0.8

0.6

1.6

1.8

1.4

1.2

1.0

0.4

0.2

300

0.1

Safe Operating Area

VCE - Collector Emitter Voltage (V)

100

100ms

10ms

100µs

1ms

0.01

0.1

FZT788B

3 - 245

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