SSF4N60F datasheet(2/8 Pages) SILIKRON

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SSF4N60F

©Silikron Semiconductor CO.,LTD.

2013.03.21

Version : 1.1

page 2 of 8

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Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJC

Junction-to-case③

—

3.79

℃/W

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

℃/W

Junction-to-Ambient (PCB mounted, steady-state) ④

—

℃/W

Electrical Characterizes @TA=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

600

—

VGS = 0V, ID = 250μA

RDS(on)

Static Drain-to-Source on-resistance

—

1.9

2.1

VGS=10V,ID = 2A

—

4.63

—

TJ = 125℃

VGS(th)

Gate threshold voltage

—

VDS = VGS, ID = 250μA

—

2.28

—

TJ = 125℃

IDSS

Drain-to-Source leakage current

—

μA

VDS = 600V,VGS = 0V

—

TJ = 125℃

IGSS

Gate-to-Source forward leakage

—

100

VGS =30V

—

-100

VGS = -30V

Total gate charge

—

17.8

—

ID = 4A,

VDS=480V,

VGS = 10V

Qgs

Gate-to-Source charge

—

3.7

—

Qgd

Gate-to-Drain("Miller") charge

—

7.1

—

td(on)

Turn-on delay time

—

10.9

—

VGS=10V, VDS=300V,

RL=75Ω,

RGEN=25Ω

ID=4A

Rise time

—

16.3

—

td(off)

Turn-Off delay time

—

40.0

—

Fall time

—

31.8

—

Ciss

Input capacitance

—

537

—

VGS = 0V

VDS = 25V

ƒ = 1MHz

Coss

Output capacitance

—

Crss

Reverse transfer capacitance

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

Diode Forward Voltage

—

0.87

1.3

IS=4A, VGS=0V

trr

Reverse Recovery Time

—

311.6

—

TJ = 25°C, IF =4A, di/dt =

0A/μs

Qrr

Reverse Recovery Charge

—

2476

—

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