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DMN26D0UDJ Datasheet(PDF) 2 Page - Zhaoxingwei Electronics ., Ltd

Part # DMN26D0UDJ
Description  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  4 Pages
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Manufacturer  ZHAOXINGWEI [Zhaoxingwei Electronics ., Ltd]
Direct Link  http://www.alldatasheet.com
Logo ZHAOXINGWEI - Zhaoxingwei Electronics ., Ltd

DMN26D0UDJ Datasheet(HTML) 2 Page - Zhaoxingwei Electronics ., Ltd

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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
10
V
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
240
190
mA
Continuous Drain Current (Note 6) VGS = 1.8V
Steady
State
TA = +25°C
TA = +70°C
ID
180
140
mA
Pulsed Drain Current - TP = 10µs
IDM
805
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
300
mW
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
409
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
20
V
VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current
@ TJ = +25°C
@TJ = +85°C (Note 8)
IDSS
500
1.7
nA
µA
VDS = 20V, VGS = 0V
VDS = 2.6V, VGS = 0V
Gate-Body Leakage
IGSS
1
100
μA
nA
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
0.45
0.8
1.05
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
1.8
3.0
Ω
VGS = 4.5V, ID = 100mA

2.5
4.0
VGS = 2.5V, ID = 50mA

3.4
6.0
VGS = 1.8V, ID = 20mA

4.7
10.0
VGS = 1.5V, ID = 10mA

9.5
VGS = 1.2V, ID = 1mA
Forward Transconductance
|Yfs|
180
240
mS
VDS =10V, ID = 0.1A
Source-Drain Diode Forward Voltage
VSD
0.5
0.8
1.0
V
VGS = 0V, IS = 10mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
14.1
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
2.9
pF
Reverse Transfer Capacitance
Crss
1.6
pF
SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 8)
Turn-On Delay Time
td(on)
3.8
ns
VGS = 4.5V, VDD = 10V
ID = 200mA, RG = 2.0Ω
Rise Time
tr
7.9
Turn-Off Delay Time
td(off)
13.4
Fall Time
tf

15.2

SMD Type
Mosfets
Mos
Mosfets
Mos



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