SW4N60 datasheet(3/5 Pages) SEMIPOWER

Part #	SW4N60

Description	N-channel MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Direct Link	http://www.samwinsemi.com

Logo

3 / 5 page

Oct. 2012. Rev. 3.0

3/5

SAMWIN

Fig. 1. On-state characteristics

Fig. 2. On-resistance variation vs.

drain current and gate voltage

Fig. 3. Gate charge characteristics

SW4N60

0.0

2.0

4.0

6.0

8.0

10.0

12.0

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

Qg, Total Gate Charge (nC)

VDS=480V

Notes:

1. 250μs Pulse Test

2. T=25 ℃

3. VGS 4~10V Step=1V

VGS=20V

VGS=10V

Fig. 4. On state current vs. diode

forward voltage

Fig 5. Breakdown Voltage Variation

vs. Junction Temperature

Fig. 6. On resistance variation

vs. junction temperature

150℃

25℃

0.5

1.5

2.5

-70 -45 -20

80 105 130 155 180

TJ Junction Temperture （℃）

0.8

0.9

1.1

1.2

-70 -45 -20

105 130 155 180

TJ Junction Temperture （℃）

SW4N60 Datasheet(PDF) 3 Page - Xian Semipower Electronic Technology Co., Ltd.

SW4N60 Datasheet(HTML) 3 Page - Xian Semipower Electronic Technology Co., Ltd.

Html Pages

1 2 3 4 5

Datasheet Download

Link URL