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SW6N60 Datasheet(PDF) 3 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW6N60 Datasheet(HTML) 3 Page - Xian Semipower Electronic Technology Co., Ltd. |
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3 / 5 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0 3/5 SAMWIN Fig. 1. On-state characteristics Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 3. Gate charge characteristics 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 Qg, Total Gate Charge (nC) VDS=480V Notes: 1. 250μs Pulse Test 2. T=25 ℃ 3. VGS 2~10V Step=1V VGS=20V VGS=10V Fig. 6. On resistance variation vs. junction temperature Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 4. On state current vs. diode forward voltage 150℃ 25℃ 0 0.5 1 1.5 2 2.5 3 -70 -45 -20 5 30 55 80 105 130 155 180 TJ Junction Temperture (℃) 0.8 0.9 1 1.1 1.2 -70 -45 -20 5 30 55 80 105 130 155 180 TJ Junction Temperture (℃) SW6N60 |
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