Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

June. 2014. Rev.1.0

Features

■ High ruggedness

■ R

■ Gate Charge (Typical 43nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

N-channel TO-220 /TO-220F MOSFET

Absolute maximum ratings

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-220F

R

thjc

Thermal resistance, Junction to case

0.46

3.88

R

thcs

Thermal resistance, Case to Sink

R

thja

Thermal resistance, Junction to ambient

55.4

45.1

1/6

BV

I

D

: 16A

R

1

2

3

SW16N65K

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW P 16N65K

SW16N65K

TO-220

TUBE

2

SW F 16N65K

SW16N65K

TO-220F

TUBE

Order Codes

Symbol

Parameter

Value

Unit

TO-220

TO-220F

V

DSS

Drain to Source Voltage

650

V

I

D

Continuous Drain Current (@T

16*

A

Continuous Drain Current (@T

10.1*

A

I

DM

Drain current pulsed

(note 1)

64

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

300

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

16

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

271.7

32.2

W

2.2

0.26

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

TO-220

TO-220F

1

2

3

1

2

3

General Description

This power MOSFET is produced with advanced super-junction technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, excellent avalanche characteristics, low gate charge and especially in

low on resistance. This power MOSFET is usually used at high efficient DC to DC converter

block and switch mode power supply.