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SW190N04A Datasheet(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

Part # SW190N04A
Description  N-channel TO-220 MOSFET
PDF  5 Pages
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Manufacturer  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Direct Link  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW190N04A Datasheet(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.1.0
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=250uA
40
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D=250uA, referenced to 25
oC
0.03
V/oC
I
DSS
Drain to source leakage current
V
DS=40V, VGS=0V
1
uA
V
DS=32V, TC=125
oC
50
uA
I
GSS
Gate to source leakage current, forward
V
GS=25V, VDS=0V
100
nA
V
GS=-25V, VDS=0V
-100
nA
Gate to source leakage current, reverse
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=250uA
2
4
V
R
DS(ON)
Drain to source on state resistance
V
GS=10V, ID =95A
3.8
4.5
m
Ω
Gfs
Forward Transconductance
V
DS = 8V, ID = 30A
85
S
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=25V, f=1MHz
4606
pF
C
oss
Output capacitance
1066
C
rss
Reverse transfer capacitance
800
t
d(on)
Turn on delay time
V
DS=20V, ID=25A，RG=25Ω
(note 4，5)
45
ns
tr
Rising time
162
t
d(off)
Turn off delay time
168
t
f
Fall time
173
Q
g
Total gate charge
V
DS=35V, VGS=10V, ID=25A
(note 4，5)
112
nC
Q
gs
Gate-source charge
12
Q
gd
Gate-drain charge
60
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
190
A
I
SM
Pulsed source current
760
A
V
SD
Diode forward voltage drop.
I
S=95A, VGS=0V
1.2
V
T
rr
Reverse recovery time
I
S=25A, VGS=0V,
dI
F/dt=100A/us
32
ns
Q
rr
Reverse recovery Charge
22
nC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 3.2mH, I
AS = 30A, VDD = 30V, RG=25Ω, Starting TJ = 25
oC
3.
I
SD ≤ 25A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25
oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
SAMWIN
2/5
SW190N04A



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