AP40P03GP_14 datasheet(1/5 Pages) A-POWER

Part #	AP40P03GP

Description	Simple Drive Requirement

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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1 / 5 page

Advanced Power

P-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Lower Gate Charge

BVDSS

-30V

▼ Simple Drive Requirement

RDS(ON)

28mΩ

▼ Fast Switching Characteristic

ID

-30A

Description

Absolute Maximum Ratings

Symbol

Units

VDS

V

VGS

V

ID@TC=25℃

A

ID@TC=100℃

A

IDM

A

PD@TC=25℃

W

W/℃

TSTG

℃

TJ

℃

Symbol

Value

Units

Rthj-c

Thermal Resistance Junction-case

Max.

4

℃/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

℃/W

Data and specifications subject to change without notice

200731072-1/4

±20

-30

0.25

-55 to 150

31.3

-55 to 150

AP40P03GP

Rating

-30

RoHS-compliant Product

Continuous Drain Current, VGS @ 10V

-18

Pulsed Drain Current

1

-120

Thermal Data

Parameter

Total Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

Linear Derating Factor

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, VGS @ 10V

G

D

S

The TO-220 package is universally preferred for all commercial-

industrial through hole applications and suited for low voltage

applications.

G

D

S

TO-220(P)

The Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

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