SSPL2015 datasheet(2/8 Pages) SILIKRON

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SSPL2015

©Silikron Semiconductor CO.,LTD.

2012.09.04

Version : 1.1

page 2 of 8

www.silikron.com

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJC

Junction-to-case ③

—

1.0

°C/W

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

°C/W

Junction-to-Ambient (PCB mounted, steady-state) ④

—

°C/W

Electrical Characterizes @T

A=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

200

—

VGS = 0V, ID= 250μA

RDS(on)

Static Drain-to-Source on-resistance

—

0.13

0.15

VGS=10V,ID =11A

—

0.27

—

TJ = 125°C

VGS(th)

Gate threshold voltage

—

VDS = VGS, ID = 250μA

—

2.26

—

TJ = 125°C

IDSS

Drain-to-Source leakage current

—

μA

VDS =200V,VGS = 0V

—

TJ = 125°C

IGSS

Gate-to-Source forward leakage

—

100

VGS =20V

—

-100

VGS = -20V

Total gate charge

—

22.0

—

ID = 18A,

VDS=160V,

VGS = 10V

Qgs

Gate-to-Source charge

—

6.6

—

Qgd

Gate-to-Drain("Miller") charge

—

7.2

—

td(on)

Turn-on delay time

—

11.0

—

VGS=10V, VDD =100V,

RL=9.2Ω,

RGEN=2.55Ω

ID =11A

Rise time

—

25.5

—

td(off)

Turn-Off delay time

—

21.9

—

Fall time

—

5.2

—

Ciss

Input capacitance

—

1038

—

VGS = 0V

VDS = 25V

ƒ = 1MHz

Coss

Output capacitance

—

232

—

Crss

Reverse transfer capacitance

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

18 ①

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

Diode Forward Voltage

—

0.89

1.3

IS=11A, VGS=0V, TJ = 25°C

trr

Reverse Recovery Time

—

136

—

TJ = 25°C, IF =11A, di/dt =

100

A/μs

Qrr

Reverse Recovery Charge

—

900

—

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