ECH8657 datasheet(2/7 Pages) ONSEMI

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Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

Zero-Gate Voltage Drain Current

IDSS

VDS=35V, VGS=0V

μA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.2

2.6

Forward Transfer Admittance

| yfs |

VDS=10V, ID=2A

1.66

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=2A, VGS=10V

mΩ

RDS(on)2

ID=1A, VGS=4.5V

119

mΩ

RDS(on)3

ID=1A, VGS=4V

110

155

mΩ

Input Capacitance

Ciss

VDS=20V, f=1MHz

230

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

6ns

Rise Time

Turn-OFF Delay Time

td(off)

Fall Time

9ns

Total Gate Charge

VDS=20V, VGS=10V, ID=4.5A

4.6

Gate-to-Source Charge

Qgs

1.0

Gate-to-Drain “Miller” Charge

Qgd

1.0

Diode Forward Voltage

VSD

IS=4.5A, VGS=0V

0.85

1.2

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

ECH8657-TL-H

ECH8

3,000pcs./reel

Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G

50Ω

ID=2A

RL=10Ω

VDD=20V

VOUT

ECH8657

VIN

10V

VIN

ECH8657

No. A1710-2/7

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