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SD2941-10 Datasheet(PDF) 1 Page - STMicroelectronics |
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SD2941-10 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 17 page ![]() This is information on a product in full production. August 2014 DocID11815 Rev 5 1/17 SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Figure 1. Pin connection Features • Gold metallization • Excellent thermal stability • Common source configuration • POUT = 175 W min. with 15 dB gain @ 175 MHz, 50 V • POUT = 135 W typ. with 14 dB gain @ 123 MHz, 28 V • Low RDS(on) • Thermally enhanced packaging for lower junction temperatures • In compliance with the 2002/95/EC1 European directive Description The SD2941-10 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 28 V to 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS(ON) than the industry standard, with 20% higher PSAT than ST's SD2931-10 device. The SD2941-10 is housed in the low thermal M174 non-pedestal package, offering 25% lower thermal resistance than the industry standard, thus rendering it the "best-in- class" transistor for ISM applications, where reliability and ruggedness are critical factor M174 Epoxy sealed 1. Drain 2. Source 3. Gate 4. Source 41 2 3 Table 1. Device summary Order code Marking Base qty. Package Packaging(1) SD2941-10W SD2941-10(1) 25 pcs M174 Plastic tray 1. For more details please refer to Chapter 7: Marking, packing and shipping specifications. www.st.com |
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