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STL24N60M2 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL24N60M2
Description  N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL24N60M2 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID024777 Rev 2
3/15
STL24N60M2
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate-source voltage
± 25
V
I
D
(1)
1.
The value is rated according to R
thj-case
and limited by package.
Drain current (continuous) at T
C
= 25 °C
18
A
I
D
(1)
Drain current (continuous) at T
C
= 100 °C
12
A
I
DM
(1),(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
72
A
P
TOT
(1)
Total dissipation at T
C
= 25 °C
125
W
dv/dt
(3)
3.
I
SD
≤ 18 A, di/dt ≤ 400 A/μs, V
DS(peak)
< V
(BR)DSS
, V
DD
=400 V
Peak diode recovery voltage slope
15
V/ns
dv/dt
(4)
4.
V
DS
≤ 480 V
MOSFET dv/dt ruggedness
50
V
T
stg
Storage temperature
- 55 to 150
°C
T
j
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
1
°C/W
R
thj-pcb
(1)
1.
When mounted on FR-4 board of inch², 2oz Cu.
Thermal resistance junction-pcb max
45
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I
AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T
jmax
)
3.5
A
E
AS
Single pulse avalanche energy (starting
T
j
=25°C, I
D
= I
AR
; V
DD
=50)
180
mJ



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