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Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

7

9.5

S

Note 2

C

ies

1400

pF

C

oes

V

98

pF

C

res

37

pF

Q

g

57

nC

Q

ge

I

C

= I

14

nC

Q

gc

25

nC

t

d(on)

30

ns

t

ri

25

ns

t

d(off)

148

300

ns

t

fi

126

250

ns

E

off

1.5

2.9

mJ

t

d(on)

30

ns

t

ri

25

ns

E

on

1.1

mJ

t

d(off)

265

ns

t

fi

298

ns

E

off

3.1

mJ

R

thJC

0.83 K/W

R

thCK

(TO-247)

0.25

K/W

Inductive load, T

I

C

= I

R

G

= 10

W, V

Note 3

Inductive load, T

I

C

= I

R

G

= 10

W

V

Note 3

Notes: 1.

Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

2.

Pulse test, t

£ 300 ms, duty cycle £ 2 %

3.

Switching times may increase for V

increased R

IXSH 15N120B

IXST 15N120B

TO-247 AD (IXSH) Outline

Dim. Millimeter

Inches

Min.

Max.

Min.

Max.

A

19.81 20.32

0.780 0.800

B

20.80 21.46

0.819 0.845

C

15.75 16.26

0.610 0.640

D

3.55

3.65

0.140 0.144

E

4.32

5.49

0.170 0.216

F

5.4

6.2

0.212 0.244

G

1.65

2.13

0.065 0.084

H

-

4.5

-

0.177

J

1.0

1.4

0.040 0.055

K

10.8

11.0

0.426 0.433

L

4.7

5.3

0.185 0.209

M

0.4

0.8

0.016 0.031

N

1.5

2.49

0.087 0.102

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.9

5.1

.193

.201

A

1

2.7

2.9

.106

.114

A

2

.02

.25

.001

.010

b

1.15

1.45

.045

.057

b

2

1.9

2.1

.75

.83

C

.4

.65

.016

.026

D

13.80

14.00

.543

.551

E

15.85

16.05

.624

.632

E

1

13.3

13.6

.524

.535

e

5.45 BSC

.215 BSC

H

18.70

19.10

.736

.752

L

2.40

2.70

.094

.106

L1

1.20

1.40

.047

.055

L2

1.00

1.15

.039

.045

L3

0.25 BSC

.010 BSC

L4

3.80

4.10

.150

.161

Min. Recommended Footprint

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025