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IXTH50P10 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTH50P10 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page  © 2008 IXYS CORPORATION, All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C -100 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ -100 V V GSS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C - 50 A I DM T C = 25°C, pulse width limited by TJM - 200 A I A T C = 25°C - 50 A E AS T C = 25°C30 mJ P D T C = 25°C 300 W T J - 55 ... +150 °C T JM 150 °C T stg - 55 ... +150 °C T L 1.6mm (0.062 in.) from case for 10s 300 °C T SOLD Plastic body for 10s 260 °C M d Mounting torque (TO-247) 1.13 / 10 Nm/lb.in. Weight TO-247 6 g TO-268 5 g DS98905E(6/08) Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. BV DSS V GS = 0V, ID = - 250 μA -100 V V GS(th) V DS = VGS, ID = - 250μA - 3.0 - 5.0 V I GSS V GS = ±20V, VDS = 0V ±100 nA I DSS V DS = 0.8 • VDSS - 25 μA V GS = 0V T J = 125°C -1 mA R DS(on) V GS = -10V, ID = 0.5 • ID25, Note 1 55 m Ω Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated V DSS = - 100V I D25 = - 50A R DS(on) ≤ ≤≤≤≤ 55m Ω Ω Ω Ω Ω G = Gate D = Drain S = Source TAB = Drain IXTH50P10 IXTT50P10 TO-268 (IXTT) G S (TAB) TO-247 (IXTH) (TAB) S G D Features International standard packages JEDEC TO-247 AD Low R DS(ON) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (< 5nH) - easy to drive and to protect Applications High side switching Push-pull amplifiers DC Choppers Automatic test equipment Advantages Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density |
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