Features

• High Surge Capability

D61-3M Package

• Not ESD Sensitive

Parameter

Symbol

FST8345M

FST8360M

Unit

Repetitive peak reverse voltage

45

60

V

RMS reverse voltage

32

42

V

DC blocking voltage

45

60

V

Conditions

100

70

100

80

FST8345M thru FST83100M

FST83100M

80

56

FST8380M

Silicon Power

Schottky Diode

DC blocking voltage

45

60

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

FST8345M

FST8360M

Unit

Average forward current (per

pkg)

80

80

A

Maximum instantaneous

forward voltage (per leg)

0.72

0.78

11

10

10

30

30

Thermal characteristics

Thermal resistance, junction -

case (per leg)

R

ΘJC

1.10

1.10

°C/W

A

80

80

Peak forward surge current (per

leg)

600

600

600

600

-55 to 150

-55 to 150

100

80

0.84

0.84

10

V

Conditions

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

-55 to 150

FST83100M

FST8380M

Maximum Instantaneous

reverse current at rated DC

blocking voltage (per leg)

30

30

mA

10

11

1.10

1.10

www.genesicsemi.com/silicon-products/schottky-rectifiers/

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