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2SC3356 Datasheet(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED

Part # 2SC3356
Description  TRANSISTOR (NPN)
PDF  1 Pages
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Manufacturer  MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]
Direct Link  http://www.makosemi.hk/
Logo MAKOSEMI - MAKO SEMICONDUCTOR CO.,LIMITED

2SC3356 Datasheet(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED

  2SC3356 Datasheet HTML 1Page - MAKO SEMICONDUCTOR CO.,LIMITED  
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2. 80¡ À0. 05
1. 60¡ À0. 05
TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
0.2
W (Tamb=25
℃)
Collector current
ICM:
0.1
A
Collector-base voltage
V(BR)CBO:
20
V
Operating and storage junction temperature range
TJ, Tstg: -55
℃ to +150℃
ELECTRICAL
CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=10
µA, IE=0
20
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 1mA, IB=0
12
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10µA, IC=0
3
V
Collector cut-off current
ICBO
VCB= 10 V, IE=0
1
µA
Emitter cut-off current
IEBO
VEB= 1V , IC=0
1
µA
DC current gain
hFE
VCE= 10V, IC= 20mA
50
300
Transition frequency
fT
VCE=10V, IC= 20mA
6
GHz
Noise figure
NF
VCE=10V, IC= 7mA, f = 1GHz
2
dB
CLASSIFICATION OF hFE
Marking
R23
R24
R25
Rank
Q
R
S
Range
50-100
80-160
125-250
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2SC3356
http://www.makosemi.hk/


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