STS05DTP03 datasheet(3/10 Pages) STMICROELECTRONICS

Part #	STS05DTP03

Description	Dual NPN-PNP complementary bipolar transistor

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 10 page

STS05DTP03

Electrical characteristics

3/10

Electrical characteristics

(TCASE = 25 °C; unless otherwise specified)

Table 4.

Q1-NPN electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 30 V

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = 30 V

µA

IEBO

Emitter cut-off current

(IB = 0)

VEB = 6 V

µA

V(BR)CEO

(1)

Collector-emitter breakdown

voltage (IB = 0)

IC = 10 mA

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = 1 A

IB = 10 mA

IC = 3 A

IB = 100 mA

IC = 5 A

IB = 250 mA

0.25

0.7

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 1 A

IB = 10 mA

1.0

hFE

(1)

DC current gain

IC = 1 A

VCE = 2 V

IC = 3 A

VCE = 2 V

IC = 5 A

VCE = 2 V

IC = 10 A

VCE = 2 V

100

140

100

300

Pulsed duration = 300 µs, duty cycle

≤1.5 %

Obsolete

Product(s)

- Obsolete

Product(s)

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