Features

• High Surge Capability

D-67 Package

• Not ESD Sensitive

Parameter

Symbol

MBRH200150(R)

Unit

Repetitive peak reverse

voltage

150

V

RMS reverse voltage

106

V

MBRH200150 thru MBRH200200R

200

141

MBRH200200(R)

Silicon Power

Schottky Diode

Conditions

DC blocking voltage

150

V

Operating temperature

-55 to 150

°C

Storage temperature

-55 to 150

°C

Parameter

Symbol

MBRH200150(R)

Unit

Average forward current (per

pkg)

200

A

Maximum instantaneous

forward voltage

0.88

1

10

50

Thermal characteristics

Thermal resistance, junction-

case

R

ΘJC

0.35

°C/W

50

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Maximum instantaneous

reverse current at rated DC

blocking voltage

1

Conditions

-55 to 150

MBRH200200(R)

0.35

0.92

3000

-55 to 150

150

200

A

10

Peak forward surge current

3000

mA

V

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